APT11N80BC3G Pricing (USD) [15456PC Stock]
- 1 pcs$2.93506
- 10 pcs$2.62084
- 100 pcs$2.14894
- 500 pcs$1.74012
- 1,000 pcs$1.46758
- Nimewo Pati:
- APT11N80BC3G
- Manifakti:
- Microsemi Corporation
- Detaye deskripsyon:
- MOSFET N-CH 800V 11A TO-247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Diodes - Bridge rèktifikateur, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - SCR, Tiristors - DIACs, SIDACs, Transistors - JFETs, Diodes - Zener - Arrays and Modil pouvwa chofè ...
- Avantaj konpetitif:
- We specialize in Microsemi Corporation APT11N80BC3G electronic components. APT11N80BC3G can be shipped within 24 hours after order. If you have any demands for APT11N80BC3G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APT11N80BC3G Atribi pwodwi yo
Nimewo Pati :
APT11N80BC3G
Manifakti :
Microsemi Corporation
Deskripsyon :
MOSFET N-CH 800V 11A TO-247
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
11A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
450 mOhm @ 7.1A, 10V
Vgs (th) (Max) @ Id :
3.9V @ 680µA
Chaje Gate (Qg) (Max) @ Vgs :
60nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1585pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
156W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247 [B]
Pake / Ka :
TO-247-3
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