IXTY1N80P Pricing (USD) [59377PC Stock]
- 1 pcs$0.72801
- 70 pcs$0.72439
- Nimewo Pati:
- IXTY1N80P
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 800V 1A TO-252.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - RF, Transistors - IGBTs - Single, Transistors - IGBTs - Arrays, Diodes - Rèkteur - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Tiristors - TRIACs ...
- Avantaj konpetitif:
- We specialize in IXYS IXTY1N80P electronic components. IXTY1N80P can be shipped within 24 hours after order. If you have any demands for IXTY1N80P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTY1N80P Atribi pwodwi yo
Nimewo Pati :
IXTY1N80P
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 800V 1A TO-252
Seri :
Polar™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
14 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
4V @ 50µA
Chaje Gate (Qg) (Max) @ Vgs :
9nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
250pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
42W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-252, (D-Pak)
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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