EGL41GHE3_A/I Pricing (USD) [758794PC Stock]
- 1 pcs$0.04875
- Nimewo Pati:
- EGL41GHE3_A/I
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE GEN PURP 400V 1A DO213AB. Rectifiers 1A,400V,50NS AEC-Q101 Qualified
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Single, Transistors - IGBTs - Modil yo, Diodes - Zener - Arrays and Transistors - Objektif espesyal ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division EGL41GHE3_A/I electronic components. EGL41GHE3_A/I can be shipped within 24 hours after order. If you have any demands for EGL41GHE3_A/I, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
EGL41GHE3_A/I Atribi pwodwi yo
Nimewo Pati :
EGL41GHE3_A/I
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 400V 1A DO213AB
Seri :
Automotive, AEC-Q101, Superectifier®
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
400V
Kouran - Mwayèn Rèktifye (Io) :
1A
Voltage - Forward (Vf) (Max) @ Si :
1.25V @ 1A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
50ns
Kouran - Fèy Reverse @ Vr :
5µA @ 400V
Kapasite @ Vr, F :
14pF @ 4V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
DO-213AB, MELF (Glass)
Pake Aparèy Founisè :
DO-213AB
Operating Tanperati - Junction :
-65°C ~ 175°C
Dènye nouvèl
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