Infineon Technologies - IRFB3006GPBF

KEY Part #: K6417975

IRFB3006GPBF Pricing (USD) [47257PC Stock]

  • 1 pcs$1.48957
  • 10 pcs$1.33091
  • 100 pcs$1.03522
  • 500 pcs$0.83827
  • 1,000 pcs$0.70697

Nimewo Pati:
IRFB3006GPBF
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 60V 195A TO220AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Transistors - Bipolè (BJT) - RF, Tiristors - DIACs, SIDACs, Tiristors - TRIACs, Diodes - Zener - Single, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - IGBTs - Arrays ...
Avantaj konpetitif:
We specialize in Infineon Technologies IRFB3006GPBF electronic components. IRFB3006GPBF can be shipped within 24 hours after order. If you have any demands for IRFB3006GPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFB3006GPBF Atribi pwodwi yo

Nimewo Pati : IRFB3006GPBF
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 60V 195A TO220AB
Seri : HEXFET®
Estati Pati : Not For New Designs
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 195A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 2.5 mOhm @ 170A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 300nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 8970pF @ 50V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 375W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220AB
Pake / Ka : TO-220-3