Vishay Semiconductor Diodes Division - VBT3080S-E3/8W

KEY Part #: K6447465

VBT3080S-E3/8W Pricing (USD) [120292PC Stock]

  • 1 pcs$0.30748
  • 1,600 pcs$0.22737

Nimewo Pati:
VBT3080S-E3/8W
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE SCHOTTKY 30A 80V TO-263AB. Schottky Diodes & Rectifiers 30A,80V,Trench
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Diodes - Zener - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - SCR, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Rèkteur - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors) and Transistors - Bipolè (BJT) - RF ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division VBT3080S-E3/8W electronic components. VBT3080S-E3/8W can be shipped within 24 hours after order. If you have any demands for VBT3080S-E3/8W, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VBT3080S-E3/8W Atribi pwodwi yo

Nimewo Pati : VBT3080S-E3/8W
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE SCHOTTKY 30A 80V TO-263AB
Seri : -
Estati Pati : Active
Kalite dyòd : Schottky
Voltage - DC Ranvèse (Vr) (Max) : 80V
Kouran - Mwayèn Rèktifye (Io) : 30A
Voltage - Forward (Vf) (Max) @ Si : 950mV @ 30A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 1µA @ 80V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè : TO-263AB
Operating Tanperati - Junction : -55°C ~ 150°C

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