PHB32N06LT,118 Pricing (USD) [149537PC Stock]
- 1 pcs$0.24858
- 800 pcs$0.24735
- Nimewo Pati:
- PHB32N06LT,118
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 60V 34A D2PAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Single, Diodes - Zener - Arrays and Transistors - Pwogramasyon Unijunction ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. PHB32N06LT,118 electronic components. PHB32N06LT,118 can be shipped within 24 hours after order. If you have any demands for PHB32N06LT,118, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PHB32N06LT,118 Atribi pwodwi yo
Nimewo Pati :
PHB32N06LT,118
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET N-CH 60V 34A D2PAK
Seri :
TrenchMOS™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
34A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 5V
RD sou (Max) @ Id, Vgs :
37 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
17nC @ 5V
Vgs (Max) :
±15V
Antre kapasite (Ciss) (Max) @ Vds :
1280pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
97W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D2PAK
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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