STH275N8F7-2AG Pricing (USD) [32962PC Stock]
- 1 pcs$1.25035
- 1,000 pcs$1.05595
- Nimewo Pati:
- STH275N8F7-2AG
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- MOSFET N-CH 80V 180A H2PAK-2.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - FETs, MOSFETs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Single, Tiristors - SCR - Modil yo, Transistors - JFETs, Diodes - Bridge rèktifikateur and Transistors - FETs, MOSFETs - Single ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STH275N8F7-2AG electronic components. STH275N8F7-2AG can be shipped within 24 hours after order. If you have any demands for STH275N8F7-2AG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STH275N8F7-2AG Atribi pwodwi yo
Nimewo Pati :
STH275N8F7-2AG
Manifakti :
STMicroelectronics
Deskripsyon :
MOSFET N-CH 80V 180A H2PAK-2
Seri :
Automotive, AEC-Q101, STripFET™ F7
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
80V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
180A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
2.1 mOhm @ 90A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
193nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
13600pF @ 50V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
315W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
H2Pak-2
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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