[9593PC Stock]
- Nimewo Pati:
- IRG7PG35U-EPBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- IGBT 1000V 55A 210W TO247AD.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Diodes - RF, Transistors - JFETs, Transistors - Bipolè (BJT) - Single, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Arrays and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRG7PG35U-EPBF electronic components. IRG7PG35U-EPBF can be shipped within 24 hours after order. If you have any demands for IRG7PG35U-EPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRG7PG35U-EPBF Atribi pwodwi yo
Nimewo Pati :
IRG7PG35U-EPBF
Manifakti :
Infineon Technologies
Deskripsyon :
IGBT 1000V 55A 210W TO247AD
Seri :
-
Estati Pati :
Obsolete
Kalite IGBT :
Trench
Voltage - Pèseptè ki emèt deba (Max) :
1000V
Kouran - Pèseptè (Ic) (Max) :
55A
Kouran - Pèseptè batman (Icm) :
60A
Vce (sou) (Max) @ Vge, Ic :
2.2V @ 15V, 20A
Pouvwa - Max :
210W
Oblije chanje enèji :
1.06mJ (on), 620µJ (off)
Kalite Antre :
Standard
Gate chaje :
85nC
Td (on / off) @ 25 ° C :
30ns/160ns
Kondisyon egzamen an :
600V, 20A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) :
-
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-247-3
Pake Aparèy Founisè :
TO-247AD
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