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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. RFD3055LESM9A

ON Semiconductor - RFD3055LESM9A

KEY Part #: K6409535

RFD3055LESM9A Pricing (USD) [341742PC Stock]

  • 1 pcs$0.10823
  • 2,500 pcs$0.10700
  • 5,000 pcs$0.09962
  • 12,500 pcs$0.09839
Nimewo Pati:
RFD3055LESM9A
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 60V 11A TO-252AA.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Transistors - Pwogramasyon Unijunction, Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - RF, Tiristors - TRIACs, Diodes - Rèkteur - Single, Transistors - JFETs and Diodes - Zener - Single ...
Avantaj konpetitif:
We specialize in ON Semiconductor RFD3055LESM9A electronic components. RFD3055LESM9A can be shipped within 24 hours after order. If you have any demands for RFD3055LESM9A, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RFD3055LESM9A Atribi pwodwi yo

Nimewo Pati : RFD3055LESM9A
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 60V 11A TO-252AA
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 11A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V
RD sou (Max) @ Id, Vgs : 107 mOhm @ 8A, 5V
Vgs (th) (Max) @ Id : 3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 11.3nC @ 10V
Vgs (Max) : ±16V
Antre kapasite (Ciss) (Max) @ Vds : 350pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 38W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-252AA
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

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