Nimewo Pati :
VS-GA200TH60S
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
IGBT 600V 260A 1042W INT-A-PAK
Nou konte genyen :
Half Bridge
Voltage - Pèseptè ki emèt deba (Max) :
600V
Kouran - Pèseptè (Ic) (Max) :
260A
Vce (sou) (Max) @ Vge, Ic :
1.9V @ 15V, 200A (Typ)
Kouran - Cutoff Pèseptè (Max) :
5µA
Antre kapasite (Cies) @ Vce :
13.1nF @ 25V
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake / Ka :
Double INT-A-PAK (3 + 4)
Pake Aparèy Founisè :
Double INT-A-PAK