RS1AL RHG Pricing (USD) [2200504PC Stock]
- 1 pcs$0.01681
- Nimewo Pati:
- RS1AL RHG
- Manifakti:
- Taiwan Semiconductor Corporation
- Detaye deskripsyon:
- DIODE GEN PURP 50V 800MA SUB SMA.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - RF, Tiristors - SCR, Modil pouvwa chofè, Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Modil yo and Transistors - Bipolè (BJT) - RF ...
- Avantaj konpetitif:
- We specialize in Taiwan Semiconductor Corporation RS1AL RHG electronic components. RS1AL RHG can be shipped within 24 hours after order. If you have any demands for RS1AL RHG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RS1AL RHG Atribi pwodwi yo
Nimewo Pati :
RS1AL RHG
Manifakti :
Taiwan Semiconductor Corporation
Deskripsyon :
DIODE GEN PURP 50V 800MA SUB SMA
Seri :
-
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
50V
Kouran - Mwayèn Rèktifye (Io) :
800mA
Voltage - Forward (Vf) (Max) @ Si :
1.3V @ 800mA
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
150ns
Kouran - Fèy Reverse @ Vr :
5µA @ 50V
Kapasite @ Vr, F :
10pF @ 4V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
DO-219AB
Pake Aparèy Founisè :
Sub SMA
Operating Tanperati - Junction :
-55°C ~ 150°C
Dènye nouvèl
Ou ka enterese tou
-
MSC010SDA070K
Microsemi Corporation
DIODE SCHOTTKY 700V 10A TO220-3. Schottky Diodes & Rectifiers 700 V, 10 A SiC SBD
-
-
NSB8JT-E3/45
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 8A TO263AB. Rectifiers 600 Volt 8.0 Amp 125 Amp IFSM
-
NSB8KT-E3/81
Vishay Semiconductor Diodes Division
DIODE GEN PURP 800V 8A TO263AB. Rectifiers 800 Volt 8.0 Amp 125 Amp IFSM
-
NSB8MT-E3/81
Vishay Semiconductor Diodes Division
DIODE GEN PURP 1KV 8A TO263AB. Rectifiers 1000 Volt 8.0 Amp 125 Amp IFSM
-
NSB8JT-E3/81
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 8A TO263AB. Rectifiers RECOMMENDED ALT 625-NSB8JT-E3
Pati cho
- APT10SCE120B
- MBR3100VP-G1
- FR206TA
- CMR3U-04 BK
- CMR3U-01 BK
- VS-18TQ035SPBF
- BAY80-TAP
- SS3H10HE3_A/H
- VS-6TQ035STRRPBF
- BAS1602WH6327XTSA1
- APT20SCD120B
- MBRF750HE3/45
- STPS30SM60D
- S5JHE3/9AT
- 1N3743G R G
- SR304-T-F
- GPP60D-E3/54
- 20ETF12FP
- DGP30HE3/54
- S3520
- MX1H5615
- MA3X028TAL
- USD245
- D6025L
- RK 14V1
- STTH8L06DIRG
- 1N5293UR-1
- 1N4002RL
- 20ETF02STRR
- UF4007 TR
- BY329-1200,127
- S1G-F
- 1F1-TP
- UF5406-AP
- 1N649UR-1
- FESF16HTHE3/45
- FES8AT-E3/45
- RP 3FV4
- RFN5BM2SFHTL
- BAS283-GS18