[13913PC Stock]
- Nimewo Pati:
- ZXM61P02FTC
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET P-CH 20V 0.9A SOT23-3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - RF, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Arrays, Diodes - Zener - Arrays, Transistors - IGBTs - Single and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated ZXM61P02FTC electronic components. ZXM61P02FTC can be shipped within 24 hours after order. If you have any demands for ZXM61P02FTC, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ZXM61P02FTC Atribi pwodwi yo
Nimewo Pati :
ZXM61P02FTC
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET P-CH 20V 0.9A SOT23-3
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
900mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.7V, 4.5V
RD sou (Max) @ Id, Vgs :
600 mOhm @ 610mA, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
3.5nC @ 4.5V
Vgs (Max) :
±12V
Antre kapasite (Ciss) (Max) @ Vds :
150pF @ 15V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
625mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SOT-23-3
Pake / Ka :
TO-236-3, SC-59, SOT-23-3
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