Taiwan Semiconductor Corporation - TSM8N70CI C0

KEY Part #: K6400435

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    Nimewo Pati:
    TSM8N70CI C0
    Manifakti:
    Taiwan Semiconductor Corporation
    Detaye deskripsyon:
    MOSFET N-CH 700V ITO220.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - TRIACs, Transistors - Objektif espesyal, Tiristors - SCR, Diodes - Zener - Single, Modil pouvwa chofè and Diodes - Varyab kapasite (Varicaps, Varactors) ...
    Avantaj konpetitif:
    We specialize in Taiwan Semiconductor Corporation TSM8N70CI C0 electronic components. TSM8N70CI C0 can be shipped within 24 hours after order. If you have any demands for TSM8N70CI C0, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    TSM8N70CI C0 Atribi pwodwi yo

    Nimewo Pati : TSM8N70CI C0
    Manifakti : Taiwan Semiconductor Corporation
    Deskripsyon : MOSFET N-CH 700V ITO220
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 700V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 8A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 900 mOhm @ 4A, 10V
    Vgs (th) (Max) @ Id : 4V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 32nC @ 10V
    Vgs (Max) : ±30V
    Antre kapasite (Ciss) (Max) @ Vds : 2006pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 40W (Tc)
    Operating Tanperati : 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : ITO-220AB
    Pake / Ka : TO-220-3 Full Pack, Isolated Tab