Toshiba Semiconductor and Storage - TPCC8103(TE12L,QM)

KEY Part #: K6400420

TPCC8103(TE12L,QM) Pricing (USD) [76032PC Stock]

  • 1 pcs$0.56443
  • 10 pcs$0.49921
  • 100 pcs$0.39460
  • 500 pcs$0.28947
  • 1,000 pcs$0.22853

Nimewo Pati:
TPCC8103(TE12L,QM)
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
MOSFET P-CH 30V 18A 8TSON.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Single, Modil pouvwa chofè, Tiristors - TRIACs, Transistors - JFETs, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage TPCC8103(TE12L,QM) electronic components. TPCC8103(TE12L,QM) can be shipped within 24 hours after order. If you have any demands for TPCC8103(TE12L,QM), Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TPCC8103(TE12L,QM) Atribi pwodwi yo

Nimewo Pati : TPCC8103(TE12L,QM)
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET P-CH 30V 18A 8TSON
Seri : U-MOSV
Estati Pati : Discontinued at Digi-Key
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 18A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4V, 10V
RD sou (Max) @ Id, Vgs : 12 mOhm @ 9A, 10V
Vgs (th) (Max) @ Id : 2V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 38nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1600pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 700mW (Ta), 27W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-TSON Advance (3.3x3.3)
Pake / Ka : 8-PowerVDFN