EGL41B-E3/97 Pricing (USD) [770357PC Stock]
- 1 pcs$0.04801
- 5,000 pcs$0.03991
- Nimewo Pati:
- EGL41B-E3/97
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE GEN PURP 100V 1A DO213AB. Rectifiers 100 Volt 1.0A 50ns Glass Passivated
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Single, Diodes - RF, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - RF, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Diodes - Varyab kapasite (Varicaps, Varactors) ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division EGL41B-E3/97 electronic components. EGL41B-E3/97 can be shipped within 24 hours after order. If you have any demands for EGL41B-E3/97, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
EGL41B-E3/97 Atribi pwodwi yo
Nimewo Pati :
EGL41B-E3/97
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 100V 1A DO213AB
Seri :
SUPERECTIFIER®
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
100V
Kouran - Mwayèn Rèktifye (Io) :
1A
Voltage - Forward (Vf) (Max) @ Si :
1V @ 1A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
50ns
Kouran - Fèy Reverse @ Vr :
5µA @ 100V
Kapasite @ Vr, F :
20pF @ 4V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
DO-213AB, MELF (Glass)
Pake Aparèy Founisè :
DO-213AB
Operating Tanperati - Junction :
-65°C ~ 175°C
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