Diodes Incorporated - ZVN2110GTA

KEY Part #: K6394134

ZVN2110GTA Pricing (USD) [226718PC Stock]

  • 1 pcs$0.16396
  • 1,000 pcs$0.16314

Nimewo Pati:
ZVN2110GTA
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET N-CH 100V 500MA SOT223.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Tiristors - SCR - Modil yo, Transistors - IGBTs - Single, Transistors - JFETs, Transistors - Bipolè (BJT) - Arrays, Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - Arrays and Diodes - RF ...
Avantaj konpetitif:
We specialize in Diodes Incorporated ZVN2110GTA electronic components. ZVN2110GTA can be shipped within 24 hours after order. If you have any demands for ZVN2110GTA, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ZVN2110GTA Atribi pwodwi yo

Nimewo Pati : ZVN2110GTA
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET N-CH 100V 500MA SOT223
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 500mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 4 Ohm @ 1A, 10V
Vgs (th) (Max) @ Id : 2.4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 75pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SOT-223
Pake / Ka : TO-261-4, TO-261AA