Nimewo Pati :
SIDC50D60C6X1SA1
Manifakti :
Infineon Technologies
Deskripsyon :
DIODE GEN PURP 600V 200A WAFER
Estati Pati :
Discontinued at Digi-Key
Voltage - DC Ranvèse (Vr) (Max) :
600V
Kouran - Mwayèn Rèktifye (Io) :
200A (DC)
Voltage - Forward (Vf) (Max) @ Si :
1.9V @ 200A
Vitès :
Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
-
Kouran - Fèy Reverse @ Vr :
27µA @ 600V
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
Sawn on foil
Operating Tanperati - Junction :
-40°C ~ 175°C