Infineon Technologies - IKW03N120H2FKSA1

KEY Part #: K6423903

[8048PC Stock]


    Nimewo Pati:
    IKW03N120H2FKSA1
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    IGBT 1200V 9.6A 62.5W TO247-3.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR - Modil yo, Diodes - Bridge rèktifikateur, Transistors - Pwogramasyon Unijunction and Transistors - Bipolè (BJT) - Single ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies IKW03N120H2FKSA1 electronic components. IKW03N120H2FKSA1 can be shipped within 24 hours after order. If you have any demands for IKW03N120H2FKSA1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IKW03N120H2FKSA1 Atribi pwodwi yo

    Nimewo Pati : IKW03N120H2FKSA1
    Manifakti : Infineon Technologies
    Deskripsyon : IGBT 1200V 9.6A 62.5W TO247-3
    Seri : -
    Estati Pati : Obsolete
    Kalite IGBT : -
    Voltage - Pèseptè ki emèt deba (Max) : 1200V
    Kouran - Pèseptè (Ic) (Max) : 9.6A
    Kouran - Pèseptè batman (Icm) : 9.9A
    Vce (sou) (Max) @ Vge, Ic : 2.8V @ 15V, 3A
    Pouvwa - Max : 62.5W
    Oblije chanje enèji : 290µJ
    Kalite Antre : Standard
    Gate chaje : 22nC
    Td (on / off) @ 25 ° C : 9.2ns/281ns
    Kondisyon egzamen an : 800V, 3A, 82 Ohm, 15V
    Ranvèse Tan Reverse (trr) : 42ns
    Operating Tanperati : -40°C ~ 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake / Ka : TO-247-3
    Pake Aparèy Founisè : PG-TO247-3