Infineon Technologies - IRF7478TRPBF

KEY Part #: K6416655

IRF7478TRPBF Pricing (USD) [196576PC Stock]

  • 1 pcs$0.18816
  • 4,000 pcs$0.16079

Nimewo Pati:
IRF7478TRPBF
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 60V 7A 8-SOIC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - IGBTs - Modil yo, Diodes - Bridge rèktifikateur, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Single, Transistors - Objektif espesyal, Transistors - JFETs and Tiristors - TRIACs ...
Avantaj konpetitif:
We specialize in Infineon Technologies IRF7478TRPBF electronic components. IRF7478TRPBF can be shipped within 24 hours after order. If you have any demands for IRF7478TRPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRF7478TRPBF Atribi pwodwi yo

Nimewo Pati : IRF7478TRPBF
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 60V 7A 8-SOIC
Seri : HEXFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 7A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 26 mOhm @ 4.2A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 31nC @ 4.5V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1740pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.5W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-SO
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)

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