Infineon Technologies - FP50R12KT3BOSA1

KEY Part #: K6534485

FP50R12KT3BOSA1 Pricing (USD) [854PC Stock]

  • 1 pcs$54.33402

Nimewo Pati:
FP50R12KT3BOSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
IGBT MODULE VCES 600V 50A.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Diodes - RF ...
Avantaj konpetitif:
We specialize in Infineon Technologies FP50R12KT3BOSA1 electronic components. FP50R12KT3BOSA1 can be shipped within 24 hours after order. If you have any demands for FP50R12KT3BOSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FP50R12KT3BOSA1 Atribi pwodwi yo

Nimewo Pati : FP50R12KT3BOSA1
Manifakti : Infineon Technologies
Deskripsyon : IGBT MODULE VCES 600V 50A
Seri : -
Estati Pati : Active
Kalite IGBT : -
Nou konte genyen : Three Phase Inverter
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 75A
Pouvwa - Max : 280W
Vce (sou) (Max) @ Vge, Ic : 2.15V @ 15V, 50A
Kouran - Cutoff Pèseptè (Max) : 5mA
Antre kapasite (Cies) @ Vce : 3.5nF @ 25V
Antre : Standard
NTC thermistor : Yes
Operating Tanperati : -40°C ~ 125°C
Mounting Kalite : Chassis Mount
Pake / Ka : Module
Pake Aparèy Founisè : Module

Ou ka enterese tou
  • GA400TD25S

    Vishay Semiconductor Diodes Division

    IGBT FAST 250V 400A INT-A-PAK.

  • CPV364M4F

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 15A IMS-2.

  • CPV363M4F

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 9A IMS-2.

  • GA200SA60U

    Vishay Semiconductor Diodes Division

    IGBT UFAST 600V 100A SOT227.

  • GA200SA60S

    Vishay Semiconductor Diodes Division

    IGBT STD 600V 100A SOT227.

  • A2P75S12M3-F

    STMicroelectronics

    IGBT TRENCH 1200V 75A ACEPACK2.