Renesas Electronics America - HAT2279H-EL-E

KEY Part #: K6418635

HAT2279H-EL-E Pricing (USD) [71063PC Stock]

  • 1 pcs$0.58654
  • 2,500 pcs$0.58363

Nimewo Pati:
HAT2279H-EL-E
Manifakti:
Renesas Electronics America
Detaye deskripsyon:
MOSFET N-CH 80V 30A 5LFPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - SCR - Modil yo, Tiristors - TRIACs, Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Modil pouvwa chofè ...
Avantaj konpetitif:
We specialize in Renesas Electronics America HAT2279H-EL-E electronic components. HAT2279H-EL-E can be shipped within 24 hours after order. If you have any demands for HAT2279H-EL-E, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

HAT2279H-EL-E Atribi pwodwi yo

Nimewo Pati : HAT2279H-EL-E
Manifakti : Renesas Electronics America
Deskripsyon : MOSFET N-CH 80V 30A 5LFPAK
Seri : -
Estati Pati : Not For New Designs
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 80V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 30A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 12 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id : -
Chaje Gate (Qg) (Max) @ Vgs : 60nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 3520pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 25W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : LFPAK
Pake / Ka : SC-100, SOT-669