DMTH10H010LCTB-13 Pricing (USD) [96513PC Stock]
- 1 pcs$0.40514
- 800 pcs$0.34369
- Nimewo Pati:
- DMTH10H010LCTB-13
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET N-CH 100V 108A TO220AB.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - JFETs, Diodes - RF, Tiristors - SCR - Modil yo, Transistors - IGBTs - Arrays, Transistors - IGBTs - Modil yo, Tiristors - SCR and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMTH10H010LCTB-13 electronic components. DMTH10H010LCTB-13 can be shipped within 24 hours after order. If you have any demands for DMTH10H010LCTB-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMTH10H010LCTB-13 Atribi pwodwi yo
Nimewo Pati :
DMTH10H010LCTB-13
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET N-CH 100V 108A TO220AB
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
108A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
9.5 mOhm @ 13A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
53.7nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
2592pF @ 50V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2.4W (Ta), 166W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB
Pake / Ka :
TO-220-3
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