Infineon Technologies - IRD3CH101DB6

KEY Part #: K6442035

[3271PC Stock]


    Nimewo Pati:
    IRD3CH101DB6
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    DIODE GEN PURP 1.2KV 200A DIE.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Transistors - IGBTs - Single, Tiristors - TRIACs, Transistors - FETs, MOSFETs - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Arrays, Tiristors - DIACs, SIDACs and Transistors - FETs, MOSFETs - Arrays ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies IRD3CH101DB6 electronic components. IRD3CH101DB6 can be shipped within 24 hours after order. If you have any demands for IRD3CH101DB6, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRD3CH101DB6 Atribi pwodwi yo

    Nimewo Pati : IRD3CH101DB6
    Manifakti : Infineon Technologies
    Deskripsyon : DIODE GEN PURP 1.2KV 200A DIE
    Seri : -
    Estati Pati : Obsolete
    Kalite dyòd : Standard
    Voltage - DC Ranvèse (Vr) (Max) : 1200V
    Kouran - Mwayèn Rèktifye (Io) : 200A
    Voltage - Forward (Vf) (Max) @ Si : 2.7V @ 200A
    Vitès : Fast Recovery =< 500ns, > 200mA (Io)
    Ranvèse Tan Reverse (trr) : 360ns
    Kouran - Fèy Reverse @ Vr : 3.6µA @ 1200V
    Kapasite @ Vr, F : -
    Mounting Kalite : Surface Mount
    Pake / Ka : Die
    Pake Aparèy Founisè : Die
    Operating Tanperati - Junction : -40°C ~ 175°C

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