ON Semiconductor - NDS0610

KEY Part #: K6397441

NDS0610 Pricing (USD) [1346407PC Stock]

  • 1 pcs$0.02964
  • 3,000 pcs$0.02950

Nimewo Pati:
NDS0610
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET P-CH 60V 120MA SOT-23.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Arrays, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Modil yo, Transistors - IGBTs - Arrays, Diodes - Rèkteur - Single and Transistors - FETs, MOSFETs - Arrays ...
Avantaj konpetitif:
We specialize in ON Semiconductor NDS0610 electronic components. NDS0610 can be shipped within 24 hours after order. If you have any demands for NDS0610, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NDS0610 Atribi pwodwi yo

Nimewo Pati : NDS0610
Manifakti : ON Semiconductor
Deskripsyon : MOSFET P-CH 60V 120MA SOT-23
Seri : -
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 120mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 10 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id : 3.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 2.5nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 79pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 360mW (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SOT-23
Pake / Ka : TO-236-3, SC-59, SOT-23-3