STMicroelectronics - STP265N6F6AG

KEY Part #: K6399555

STP265N6F6AG Pricing (USD) [26049PC Stock]

  • 1 pcs$1.58211
  • 10 pcs$1.41421
  • 100 pcs$1.10027
  • 500 pcs$0.89095
  • 1,000 pcs$0.75140

Nimewo Pati:
STP265N6F6AG
Manifakti:
STMicroelectronics
Detaye deskripsyon:
MOSFET N-CH 60V 180A TO220.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Transistors - IGBTs - Arrays, Tiristors - SCR - Modil yo, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Transistors - Objektif espesyal, Diodes - Rèkteur - Arrays and Diodes - Rèkteur - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STP265N6F6AG Atribi pwodwi yo

Nimewo Pati : STP265N6F6AG
Manifakti : STMicroelectronics
Deskripsyon : MOSFET N-CH 60V 180A TO220
Seri : Automotive, AEC-Q101, STripFET™ F6
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 180A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 2.85 mOhm @ 60A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 183nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 11800pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 300W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220
Pake / Ka : TO-220-3