Microsemi Corporation - APTGTQ100DDA65T3G

KEY Part #: K6533024

APTGTQ100DDA65T3G Pricing (USD) [1877PC Stock]

  • 1 pcs$23.06400

Nimewo Pati:
APTGTQ100DDA65T3G
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
POWER MODULE - IGBT.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - Arrays, Tiristors - SCR, Diodes - RF and Diodes - Zener - Single ...
Avantaj konpetitif:
We specialize in Microsemi Corporation APTGTQ100DDA65T3G electronic components. APTGTQ100DDA65T3G can be shipped within 24 hours after order. If you have any demands for APTGTQ100DDA65T3G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APTGTQ100DDA65T3G Atribi pwodwi yo

Nimewo Pati : APTGTQ100DDA65T3G
Manifakti : Microsemi Corporation
Deskripsyon : POWER MODULE - IGBT
Seri : -
Estati Pati : Active
Kalite IGBT : -
Nou konte genyen : Dual Boost Chopper
Voltage - Pèseptè ki emèt deba (Max) : 650V
Kouran - Pèseptè (Ic) (Max) : 100A
Pouvwa - Max : 250W
Vce (sou) (Max) @ Vge, Ic : 2.2V @ 15V, 100A
Kouran - Cutoff Pèseptè (Max) : 100µA
Antre kapasite (Cies) @ Vce : 6nF @ 25V
Antre : Standard
NTC thermistor : Yes
Operating Tanperati : -40°C ~ 175°C (TJ)
Mounting Kalite : Chassis Mount
Pake / Ka : Module
Pake Aparèy Founisè : SP3F