EPC2001C Pricing (USD) [41490PC Stock]
- 1 pcs$0.98973
- 2,500 pcs$0.98481
- Nimewo Pati:
- EPC2001C
- Manifakti:
- EPC
- Detaye deskripsyon:
- GANFET TRANS 100V 36A BUMPED DIE.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Transistors - JFETs, Tiristors - SCR, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Arrays, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Modil yo and Transistors - IGBTs - Arrays ...
- Avantaj konpetitif:
- We specialize in EPC EPC2001C electronic components. EPC2001C can be shipped within 24 hours after order. If you have any demands for EPC2001C, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
EPC2001C Atribi pwodwi yo
Nimewo Pati :
EPC2001C
Manifakti :
EPC
Deskripsyon :
GANFET TRANS 100V 36A BUMPED DIE
Seri :
eGaN®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
GaNFET (Gallium Nitride)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
36A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
5V
RD sou (Max) @ Id, Vgs :
7 mOhm @ 25A, 5V
Vgs (th) (Max) @ Id :
2.5V @ 5mA
Chaje Gate (Qg) (Max) @ Vgs :
9nC @ 5V
Vgs (Max) :
+6V, -4V
Antre kapasite (Ciss) (Max) @ Vds :
900pF @ 50V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
-
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
Die Outline (11-Solder Bar)
Pake / Ka :
Die
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