IRFBC40ASPBF Pricing (USD) [19008PC Stock]
- 1 pcs$2.16824
- 10 pcs$1.93776
- 100 pcs$1.58903
- 500 pcs$1.28675
- 1,000 pcs$1.02955
- Nimewo Pati:
- IRFBC40ASPBF
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CH 600V 6.2A D2PAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - Single, Modil pouvwa chofè, Tiristors - TRIACs, Transistors - IGBTs - Arrays and Tiristors - SCR ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix IRFBC40ASPBF electronic components. IRFBC40ASPBF can be shipped within 24 hours after order. If you have any demands for IRFBC40ASPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFBC40ASPBF Atribi pwodwi yo
Nimewo Pati :
IRFBC40ASPBF
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 600V 6.2A D2PAK
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6.2A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
1.2 Ohm @ 3.7A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
42nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
1036pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
125W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D2PAK
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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