Vishay Semiconductor Diodes Division - UH1B-E3/5AT

KEY Part #: K6446736

UH1B-E3/5AT Pricing (USD) [1664PC Stock]

  • 7,500 pcs$0.04049

Nimewo Pati:
UH1B-E3/5AT
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 100V 1A DO214AC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Transistors - Pwogramasyon Unijunction, Diodes - Rèkteur - Arrays, Modil pouvwa chofè, Diodes - Rèkteur - Single, Diodes - RF, Transistors - Bipolè (BJT) - Arrays and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division UH1B-E3/5AT electronic components. UH1B-E3/5AT can be shipped within 24 hours after order. If you have any demands for UH1B-E3/5AT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

UH1B-E3/5AT Atribi pwodwi yo

Nimewo Pati : UH1B-E3/5AT
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 100V 1A DO214AC
Seri : -
Estati Pati : Obsolete
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 100V
Kouran - Mwayèn Rèktifye (Io) : 1A
Voltage - Forward (Vf) (Max) @ Si : 1.05V @ 1A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 30ns
Kouran - Fèy Reverse @ Vr : 1µA @ 100V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : DO-214AC, SMA
Pake Aparèy Founisè : DO-214AC (SMA)
Operating Tanperati - Junction : -55°C ~ 175°C

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