[8715PC Stock]
- Nimewo Pati:
- IPB65R660CFDATMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 650V 6A TO263.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Transistors - IGBTs - Arrays, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - RF, Diodes - RF, Tiristors - SCR - Modil yo and Transistors - Pwogramasyon Unijunction ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IPB65R660CFDATMA1 electronic components. IPB65R660CFDATMA1 can be shipped within 24 hours after order. If you have any demands for IPB65R660CFDATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB65R660CFDATMA1 Atribi pwodwi yo
Nimewo Pati :
IPB65R660CFDATMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 650V 6A TO263
Seri :
CoolMOS™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
660 mOhm @ 2.1A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 200µA
Chaje Gate (Qg) (Max) @ Vgs :
22nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
615pF @ 100V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
62.5W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D²PAK (TO-263AB)
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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