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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FQP15P12

ON Semiconductor - FQP15P12

KEY Part #: K6419827

FQP15P12 Pricing (USD) [136183PC Stock]

  • 1 pcs$0.27160
  • 1,000 pcs$0.22188
Nimewo Pati:
FQP15P12
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET P-CH 120V 15A TO-220.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - RF, Tiristors - TRIACs, Tiristors - SCR - Modil yo, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Single and Diodes - Rèkteur - Arrays ...
Avantaj konpetitif:
We specialize in ON Semiconductor FQP15P12 electronic components. FQP15P12 can be shipped within 24 hours after order. If you have any demands for FQP15P12, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FQP15P12 Atribi pwodwi yo

Nimewo Pati : FQP15P12
Manifakti : ON Semiconductor
Deskripsyon : MOSFET P-CH 120V 15A TO-220
Seri : QFET®
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 120V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 15A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 200 mOhm @ 7.5A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 38nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 1100pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 100W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220-3
Pake / Ka : TO-220-3

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