Nimewo Pati :
SCT3022ALGC11
Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET NCH 650V 93A TO247N
Teknoloji :
SiCFET (Silicon Carbide)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
93A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
18V
RD sou (Max) @ Id, Vgs :
28.6 mOhm @ 36A, 18V
Vgs (th) (Max) @ Id :
5.6V @ 18.2mA
Chaje Gate (Qg) (Max) @ Vgs :
133nC @ 18V
Antre kapasite (Ciss) (Max) @ Vds :
2208pF @ 500V
Disipasyon Pouvwa (Max) :
339W (Tc)
Operating Tanperati :
175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247N