R6009ENX Pricing (USD) [33884PC Stock]
- 1 pcs$1.33532
- 10 pcs$1.20796
- 100 pcs$0.92099
- 500 pcs$0.71631
- 1,000 pcs$0.59351
- Nimewo Pati:
- R6009ENX
- Manifakti:
- Rohm Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 600V 9A TO220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - RF, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - RF, Tiristors - SCR - Modil yo, Transistors - IGBTs - Modil yo and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in Rohm Semiconductor R6009ENX electronic components. R6009ENX can be shipped within 24 hours after order. If you have any demands for R6009ENX, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
R6009ENX Atribi pwodwi yo
Nimewo Pati :
R6009ENX
Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET N-CH 600V 9A TO220
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
9A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
535 mOhm @ 2.8A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
23nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
430pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
40W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220FM
Pake / Ka :
TO-220-3 Full Pack
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