IXYS - IXYP30N120C3

KEY Part #: K6422012

IXYP30N120C3 Pricing (USD) [15683PC Stock]

  • 1 pcs$2.62763
  • 100 pcs$2.48423

Nimewo Pati:
IXYP30N120C3
Manifakti:
IXYS
Detaye deskripsyon:
IGBT 1200V 75A 500W TO220.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Modil yo, Diodes - Zener - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in IXYS IXYP30N120C3 electronic components. IXYP30N120C3 can be shipped within 24 hours after order. If you have any demands for IXYP30N120C3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXYP30N120C3 Atribi pwodwi yo

Nimewo Pati : IXYP30N120C3
Manifakti : IXYS
Deskripsyon : IGBT 1200V 75A 500W TO220
Seri : GenX3™, XPT™
Estati Pati : Active
Kalite IGBT : -
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 75A
Kouran - Pèseptè batman (Icm) : 145A
Vce (sou) (Max) @ Vge, Ic : 3.3V @ 15V, 30A
Pouvwa - Max : 500W
Oblije chanje enèji : 2.6mJ (on), 1.1mJ (off)
Kalite Antre : Standard
Gate chaje : 69nC
Td (on / off) @ 25 ° C : 19ns/130ns
Kondisyon egzamen an : 600V, 30A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) : -
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-220-3
Pake Aparèy Founisè : TO-220AB