FD150R12RT4HOSA1 Pricing (USD) [1637PC Stock]
- 1 pcs$26.44980
- Nimewo Pati:
- FD150R12RT4HOSA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- IGBT MODULE 1200V 150A.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Rèkteur - Arrays, Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Tiristors - SCR, Diodes - Zener - Single and Transistors - FETs, MOSFETs - Single ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies FD150R12RT4HOSA1 electronic components. FD150R12RT4HOSA1 can be shipped within 24 hours after order. If you have any demands for FD150R12RT4HOSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FD150R12RT4HOSA1 Atribi pwodwi yo
Nimewo Pati :
FD150R12RT4HOSA1
Manifakti :
Infineon Technologies
Deskripsyon :
IGBT MODULE 1200V 150A
Seri :
C
Estati Pati :
Active
Kalite IGBT :
Trench Field Stop
Nou konte genyen :
Single Chopper
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
150A
Pouvwa - Max :
790W
Vce (sou) (Max) @ Vge, Ic :
2.15V @ 15V, 150A
Kouran - Cutoff Pèseptè (Max) :
1mA
Antre kapasite (Cies) @ Vce :
9.3nF @ 25V
Antre :
Standard
NTC thermistor :
No
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake / Ka :
Module
Pake Aparèy Founisè :
Module
Dènye nouvèl
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