Infineon Technologies - BYM300B170DN2HOSA1

KEY Part #: K6534150

BYM300B170DN2HOSA1 Pricing (USD) [494PC Stock]

  • 1 pcs$93.97577

Nimewo Pati:
BYM300B170DN2HOSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOD IGBT MED POWER 62MM-1.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - Arrays and Transistors - Bipolè (BJT) - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYM300B170DN2HOSA1 Atribi pwodwi yo

Nimewo Pati : BYM300B170DN2HOSA1
Manifakti : Infineon Technologies
Deskripsyon : MOD IGBT MED POWER 62MM-1
Seri : -
Estati Pati : Not For New Designs
Kalite IGBT : Trench Field Stop
Nou konte genyen : 2 Independent
Voltage - Pèseptè ki emèt deba (Max) : 650V
Kouran - Pèseptè (Ic) (Max) : 40A
Pouvwa - Max : 20mW
Vce (sou) (Max) @ Vge, Ic : 1.55V @ 15V, 25A
Kouran - Cutoff Pèseptè (Max) : 40µA
Antre kapasite (Cies) @ Vce : 2.8nF @ 25V
Antre : Standard
NTC thermistor : Yes
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake / Ka : Module
Pake Aparèy Founisè : Module