Vishay Semiconductor Diodes Division - GSD2004W-HE3-08

KEY Part #: K6452974

GSD2004W-HE3-08 Pricing (USD) [1760237PC Stock]

  • 1 pcs$0.02101
  • 15,000 pcs$0.01631

Nimewo Pati:
GSD2004W-HE3-08
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 240V 225MA SOD123. Diodes - General Purpose, Power, Switching 300 Volt 225mA 50ns
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Tiristors - SCR - Modil yo, Tiristors - SCR, Diodes - Zener - Single, Tiristors - TRIACs, Transistors - Objektif espesyal, Transistors - IGBTs - Arrays and Transistors - FETs, MOSFETs - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division GSD2004W-HE3-08 electronic components. GSD2004W-HE3-08 can be shipped within 24 hours after order. If you have any demands for GSD2004W-HE3-08, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GSD2004W-HE3-08 Atribi pwodwi yo

Nimewo Pati : GSD2004W-HE3-08
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 240V 225MA SOD123
Seri : Automotive, AEC-Q101
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 240V
Kouran - Mwayèn Rèktifye (Io) : 225mA (DC)
Voltage - Forward (Vf) (Max) @ Si : 1V @ 100mA
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 50ns
Kouran - Fèy Reverse @ Vr : 100nA @ 240V
Kapasite @ Vr, F : 5pF @ 0V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : SOD-123
Pake Aparèy Founisè : SOD-123
Operating Tanperati - Junction : 150°C (Max)

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    DIODE GEN PURP 240V 225MA SOD123. Diodes - General Purpose, Power, Switching 300 Volt 225mA 50ns