Vishay Semiconductor Diodes Division - VS-8ETH06-N3

KEY Part #: K6442725

VS-8ETH06-N3 Pricing (USD) [3035PC Stock]

  • 1,000 pcs$0.59410

Nimewo Pati:
VS-8ETH06-N3
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 600V 8A TO220AC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Single, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Arrays and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division VS-8ETH06-N3 electronic components. VS-8ETH06-N3 can be shipped within 24 hours after order. If you have any demands for VS-8ETH06-N3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-8ETH06-N3 Atribi pwodwi yo

Nimewo Pati : VS-8ETH06-N3
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 600V 8A TO220AC
Seri : FRED Pt®
Estati Pati : Obsolete
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 600V
Kouran - Mwayèn Rèktifye (Io) : 8A
Voltage - Forward (Vf) (Max) @ Si : 2.4V @ 8A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 25ns
Kouran - Fèy Reverse @ Vr : 50µA @ 600V
Kapasite @ Vr, F : -
Mounting Kalite : Through Hole
Pake / Ka : TO-220-2
Pake Aparèy Founisè : TO-220AC
Operating Tanperati - Junction : -65°C ~ 175°C

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