[1012PC Stock]
- Nimewo Pati:
- BSR316PL6327HTSA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET P-CH 100V 0.36A SC-59.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Tiristors - SCR - Modil yo, Tiristors - DIACs, SIDACs, Tiristors - SCR, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Arrays and Diodes - Zener - Arrays ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies BSR316PL6327HTSA1 electronic components. BSR316PL6327HTSA1 can be shipped within 24 hours after order. If you have any demands for BSR316PL6327HTSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSR316PL6327HTSA1 Atribi pwodwi yo
Nimewo Pati :
BSR316PL6327HTSA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET P-CH 100V 0.36A SC-59
Seri :
SIPMOS®
Estati Pati :
Discontinued at Digi-Key
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
360mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
1.8 Ohm @ 360mA, 10V
Vgs (th) (Max) @ Id :
1V @ 170µA
Chaje Gate (Qg) (Max) @ Vgs :
7nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
165pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
500mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-SC-59
Pake / Ka :
TO-236-3, SC-59, SOT-23-3
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