[3324PC Stock]
- Nimewo Pati:
- IDC08S60CEX1SA3
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- DIODE SIC 600V 8A SAWN WAFER.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Tiristors - SCR - Modil yo, Diodes - Zener - Single, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - Single and Transistors - Pwogramasyon Unijunction ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IDC08S60CEX1SA3 electronic components. IDC08S60CEX1SA3 can be shipped within 24 hours after order. If you have any demands for IDC08S60CEX1SA3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IDC08S60CEX1SA3 Atribi pwodwi yo
Nimewo Pati :
IDC08S60CEX1SA3
Manifakti :
Infineon Technologies
Deskripsyon :
DIODE SIC 600V 8A SAWN WAFER
Seri :
CoolSiC™
Estati Pati :
Obsolete
Kalite dyòd :
Silicon Carbide Schottky
Voltage - DC Ranvèse (Vr) (Max) :
600V
Kouran - Mwayèn Rèktifye (Io) :
8A (DC)
Voltage - Forward (Vf) (Max) @ Si :
1.7V @ 8A
Vitès :
No Recovery Time > 500mA (Io)
Ranvèse Tan Reverse (trr) :
0ns
Kouran - Fèy Reverse @ Vr :
100µA @ 600V
Kapasite @ Vr, F :
310pF @ 1V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
Die
Pake Aparèy Founisè :
Die
Operating Tanperati - Junction :
-55°C ~ 175°C
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