IXYS - IXTP01N100D

KEY Part #: K6400048

IXTP01N100D Pricing (USD) [20874PC Stock]

  • 1 pcs$2.17265
  • 10 pcs$1.93908
  • 100 pcs$1.59005
  • 500 pcs$1.28755
  • 1,000 pcs$1.03020

Nimewo Pati:
IXTP01N100D
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 1KV .1A TO-220AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Arrays, Transistors - JFETs and Transistors - FETs, MOSFETs - RF ...
Avantaj konpetitif:
We specialize in IXYS IXTP01N100D electronic components. IXTP01N100D can be shipped within 24 hours after order. If you have any demands for IXTP01N100D, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTP01N100D Atribi pwodwi yo

Nimewo Pati : IXTP01N100D
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 1KV .1A TO-220AB
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 1000V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 100mA (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : -
RD sou (Max) @ Id, Vgs : 110 Ohm @ 50mA, 0V
Vgs (th) (Max) @ Id : -
Chaje Gate (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 120pF @ 25V
Karakteristik FET : Depletion Mode
Disipasyon Pouvwa (Max) : 1.1W (Ta), 25W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220AB
Pake / Ka : TO-220-3