Nimewo Pati :
UG06A-E3/54
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 50V 600MA MPG06
Voltage - DC Ranvèse (Vr) (Max) :
50V
Kouran - Mwayèn Rèktifye (Io) :
600mA
Voltage - Forward (Vf) (Max) @ Si :
950mV @ 600mA
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
25ns
Kouran - Fèy Reverse @ Vr :
5µA @ 50V
Kapasite @ Vr, F :
9pF @ 4V, 1MHz
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
MPG06
Operating Tanperati - Junction :
-55°C ~ 150°C