Infineon Technologies - IPG20N06S3L-35

KEY Part #: K6524127

[3936PC Stock]


    Nimewo Pati:
    IPG20N06S3L-35
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    MOSFET 2N-CH 55V 20A TDSON-8.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Tiristors - SCR - Modil yo, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - Arrays, Diodes - Rèkteur - Single, Diodes - RF and Transistors - Objektif espesyal ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies IPG20N06S3L-35 electronic components. IPG20N06S3L-35 can be shipped within 24 hours after order. If you have any demands for IPG20N06S3L-35, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IPG20N06S3L-35 Atribi pwodwi yo

    Nimewo Pati : IPG20N06S3L-35
    Manifakti : Infineon Technologies
    Deskripsyon : MOSFET 2N-CH 55V 20A TDSON-8
    Seri : OptiMOS™
    Estati Pati : Obsolete
    FET Kalite : 2 N-Channel (Dual)
    Karakteristik FET : Logic Level Gate
    Drenaj nan Voltage Sous (Vdss) : 55V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 20A
    RD sou (Max) @ Id, Vgs : 35 mOhm @ 11A, 10V
    Vgs (th) (Max) @ Id : 2.2V @ 15µA
    Chaje Gate (Qg) (Max) @ Vgs : 23nC @ 10V
    Antre kapasite (Ciss) (Max) @ Vds : 1730pF @ 25V
    Pouvwa - Max : 30W
    Operating Tanperati : -55°C ~ 175°C (TJ)
    Mounting Kalite : Surface Mount
    Pake / Ka : 8-PowerVDFN
    Pake Aparèy Founisè : PG-TDSON-8-4