Nimewo Pati :
GB02SHT03-46
Manifakti :
GeneSiC Semiconductor
Deskripsyon :
DIODE SCHOTTKY 300V 4A
Kalite dyòd :
Silicon Carbide Schottky
Voltage - DC Ranvèse (Vr) (Max) :
300V
Kouran - Mwayèn Rèktifye (Io) :
4A (DC)
Voltage - Forward (Vf) (Max) @ Si :
1.6V @ 1A
Vitès :
No Recovery Time > 500mA (Io)
Ranvèse Tan Reverse (trr) :
0ns
Kouran - Fèy Reverse @ Vr :
5µA @ 300V
Kapasite @ Vr, F :
76pF @ 1V, 1MHz
Mounting Kalite :
Through Hole
Pake / Ka :
TO-206AB, TO-46-3 Metal Can
Pake Aparèy Founisè :
TO-46
Operating Tanperati - Junction :
-55°C ~ 225°C