Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET N-CH 20V 3.2A 3DFN
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3.2A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.5V, 4.5V
RD sou (Max) @ Id, Vgs :
54 mOhm @ 3.2A, 4.5V
Vgs (th) (Max) @ Id :
900mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
10nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
551pF @ 10V
Disipasyon Pouvwa (Max) :
400mW (Ta), 8.33W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DFN1010D-3
Pake / Ka :
3-XDFN Exposed Pad