Vishay Semiconductor Diodes Division - SE30AFBHM3/6B

KEY Part #: K6457980

SE30AFBHM3/6B Pricing (USD) [788477PC Stock]

  • 1 pcs$0.04950
  • 14,000 pcs$0.04926

Nimewo Pati:
SE30AFBHM3/6B
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 100V 1.4A DO221AC. Rectifiers 3 Amp 100 volts ESD PROTECTION 13in
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Transistors - JFETs, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Arrays, Tiristors - TRIACs, Transistors - IGBTs - Modil yo, Diodes - Zener - Arrays and Transistors - Bipolè (BJT) - RF ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division SE30AFBHM3/6B electronic components. SE30AFBHM3/6B can be shipped within 24 hours after order. If you have any demands for SE30AFBHM3/6B, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SE30AFBHM3/6B Atribi pwodwi yo

Nimewo Pati : SE30AFBHM3/6B
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 100V 1.4A DO221AC
Seri : Automotive, AEC-Q101
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 100V
Kouran - Mwayèn Rèktifye (Io) : 1.4A (DC)
Voltage - Forward (Vf) (Max) @ Si : 1.1V @ 3A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 1.5µs
Kouran - Fèy Reverse @ Vr : 100µA @ 100V
Kapasite @ Vr, F : 19pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-221AC, SMA Flat Leads
Pake Aparèy Founisè : DO-221AC
Operating Tanperati - Junction : -55°C ~ 175°C

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