Microsemi Corporation - APT50GS60BRDQ2G

KEY Part #: K6423440

APT50GS60BRDQ2G Pricing (USD) [7917PC Stock]

  • 1 pcs$5.20467
  • 10 pcs$4.68332
  • 25 pcs$4.26703
  • 100 pcs$3.85075
  • 250 pcs$3.53850
  • 500 pcs$3.22629

Nimewo Pati:
APT50GS60BRDQ2G
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
IGBT 600V 93A 415W TO247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Single, Tiristors - TRIACs, Transistors - Bipolè (BJT) - RF, Diodes - Rèkteur - Arrays, Tiristors - DIACs, SIDACs and Diodes - Zener - Arrays ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT50GS60BRDQ2G Atribi pwodwi yo

Nimewo Pati : APT50GS60BRDQ2G
Manifakti : Microsemi Corporation
Deskripsyon : IGBT 600V 93A 415W TO247
Seri : Thunderbolt IGBT®
Estati Pati : Active
Kalite IGBT : NPT
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 93A
Kouran - Pèseptè batman (Icm) : 195A
Vce (sou) (Max) @ Vge, Ic : 3.15V @ 15V, 50A
Pouvwa - Max : 415W
Oblije chanje enèji : 755µJ (off)
Kalite Antre : Standard
Gate chaje : 235nC
Td (on / off) @ 25 ° C : 16ns/225ns
Kondisyon egzamen an : 400V, 40A, 4.7 Ohm, 15V
Ranvèse Tan Reverse (trr) : 25ns
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : TO-247 [B]