[470PC Stock]
- Nimewo Pati:
- IXFC12N80P
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 800V 7A ISOPLUS220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Transistors - Objektif espesyal, Transistors - IGBTs - Modil yo, Tiristors - TRIACs, Transistors - Pwogramasyon Unijunction, Transistors - JFETs, Diodes - Varyab kapasite (Varicaps, Varactors) and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in IXYS IXFC12N80P electronic components. IXFC12N80P can be shipped within 24 hours after order. If you have any demands for IXFC12N80P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFC12N80P Atribi pwodwi yo
Nimewo Pati :
IXFC12N80P
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 800V 7A ISOPLUS220
Seri :
HiPerFET™, PolarHT™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
7A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
930 mOhm @ 6A, 10V
Vgs (th) (Max) @ Id :
5.5V @ 2.5mA
Chaje Gate (Qg) (Max) @ Vgs :
51nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
2800pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
120W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
ISOPLUS220™
Pake / Ka :
ISOPLUS220™
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