Infineon Technologies - IRFS4127TRLPBF

KEY Part #: K6417108

IRFS4127TRLPBF Pricing (USD) [40660PC Stock]

  • 1 pcs$0.96163
  • 800 pcs$0.82784

Nimewo Pati:
IRFS4127TRLPBF
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 200V 72A D2PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Arrays, Tiristors - TRIACs, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Arrays, Transistors - IGBTs - Single and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFS4127TRLPBF Atribi pwodwi yo

Nimewo Pati : IRFS4127TRLPBF
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 200V 72A D2PAK
Seri : HEXFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 72A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 22 mOhm @ 44A, 10V
Vgs (th) (Max) @ Id : 5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 150nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 5380pF @ 50V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 375W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D2PAK
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB