Vishay Semiconductor Diodes Division - FES8GT-6HE3/45

KEY Part #: K6433598

[7716PC Stock]


    Nimewo Pati:
    FES8GT-6HE3/45
    Manifakti:
    Vishay Semiconductor Diodes Division
    Detaye deskripsyon:
    DIODE ARRAY GP TO220AC.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - Single, Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - RF, Modil pouvwa chofè and Transistors - IGBTs - Modil yo ...
    Avantaj konpetitif:
    We specialize in Vishay Semiconductor Diodes Division FES8GT-6HE3/45 electronic components. FES8GT-6HE3/45 can be shipped within 24 hours after order. If you have any demands for FES8GT-6HE3/45, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FES8GT-6HE3/45 Atribi pwodwi yo

    Nimewo Pati : FES8GT-6HE3/45
    Manifakti : Vishay Semiconductor Diodes Division
    Deskripsyon : DIODE ARRAY GP TO220AC
    Seri : Automotive, AEC-Q101
    Estati Pati : Obsolete
    Kalite dyòd : Standard
    Voltage - DC Ranvèse (Vr) (Max) : 400V
    Kouran - Mwayèn Rèktifye (Io) : 8A
    Voltage - Forward (Vf) (Max) @ Si : 1.5V @ 8A
    Vitès : Fast Recovery =< 500ns, > 200mA (Io)
    Ranvèse Tan Reverse (trr) : 50ns
    Kouran - Fèy Reverse @ Vr : 10µA @ 400V
    Kapasite @ Vr, F : 85pF @ 4V, 1MHz
    Mounting Kalite : Through Hole
    Pake / Ka : TO-220-2
    Pake Aparèy Founisè : TO-220AC
    Operating Tanperati - Junction : -55°C ~ 150°C

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